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參數資料
| 型號： | MRF8P23080HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN |
| 文件頁數： | 1/15頁 |
| 文件大小： | 645K |
| 代理商： | MRF8P23080HR3 |
MRF8P23080HR3 MRF8P23080HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28 Volts,
IDQA = 280 mA, VGSB =0.7 Vdc, Pout = 16 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz
14.6
42.0
6.7
--29.5
2350 MHz
14.7
41.6
6.8
--31.5
2400 MHz
14.6
41.4
6.6
--32.5
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2350 MHz, 90 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point
100 Watts CW
Features
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW Operation @ TC =25°C
Derate above 25°C
CW
168
2.39
W
W/°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8P23080H
Rev. 1, 11/2010
Freescale Semiconductor
Technical Data
2300--2400 MHz, 16 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P23080HR3
MRF8P23080HSR3
(Top View)
RFoutA/VDSA
31
Figure 1. Pin Connections
42 RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P23080HSR3
CASE 465M--01, STYLE 1
NI--780--4
MRF8P23080HR3
Freescale Semiconductor, Inc., 2010. All rights reserved.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF8P23080HR5 | 功能描述:射頻MOSFET電源晶體管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HSR3 | 功能描述:射頻MOSFET電源晶體管 RF FET V8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HSR5 | 功能描述:射頻MOSFET電源晶體管 RF FET HV8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23160WHR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.3GHz 160W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23160WHR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.3GHz 160W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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