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參數資料
| 型號： | MRF8S19140HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780, 2 PIN |
| 文件頁數： | 1/14頁 |
| 文件大小： | 402K |
| 代理商： | MRF8S19140HSR3 |
MRF8S19140HR3 MRF8S19140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and LTE base station applications with
frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
Typical Single--Carrier W--CDMA Performance: VDD =28 Volts,IDQ =
1100 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz
18.8
31.7
6.4
--38.5
1960 MHz
19.1
31.4
6.5
--38.8
1990 MHz
19.3
31.5
6.5
--38.8
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 191 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point
138 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75°C, 34 W CW, 28 Vdc, IDQ = 1100 mA, 1960 MHz
Case Temperature 80°C, 140 W CW, 28 Vdc, IDQ = 1100 mA, 1960 MHz
RθJC
0.48
0.45
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S19140H
Rev. 0, 5/2010
Freescale Semiconductor
Technical Data
1930--1990 MHz, 34 W AVG., 28 V
CDMA, W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S19140HR3
MRF8S19140HSR3
CASE 465--06, STYLE 1
NI--780
MRF8S19140HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S19140HSR3
Freescale Semiconductor, Inc., 2010. All rights reserved.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF8S19140HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 140W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S19260H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF8S19260HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 1.9GHZ 260W NI1230-8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S19260HR6 | 功能描述:射頻MOSFET電源晶體管 65V N-CH 1960MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S19260HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 1.9GHZ 260W NI1230S8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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