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參數資料
| 型號： | MRF8S21200HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數： | 1/14頁 |
| 文件大小： | 580K |
| 代理商： | MRF8S21200HR6 |
MRF8S21200HR6 MRF8S21200HSR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
Typical Single--Carrier W--CDMA Performance: VDD =28 Volts,IDQ =
1400 mA, Pout = 48 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
17.8
32.6
6.4
--37.7
2140 MHz
18.1
32.6
6.3
--37.1
2170 MHz
18.1
32.9
6.2
--36.2
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 250 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW Operation @ TA =25°C
Derate above 25°C
CW
200
1.6
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 48 W CW, 28 Vdc, IDQ = 1400 mA
Case Temperature 81°C, 200 W CW, 28 Vdc, IDQ = 1400 mA
RθJC
0.31
0.27
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S21200H
Rev. 2, 10/2010
Freescale Semiconductor
Technical Data
2110--2170 MHz, 48 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S21200HR6
MRF8S21200HSR6
CASE 375D--05, STYLE 1
NI--1230
MRF8S21200HR6
(Top View)
RFout/VDS
Figure 1. Pin Connections
RFout/VDS
RFin/VGS
31
42
CASE 375E--04, STYLE 1
NI--1230S
MRF8S21200HSR6
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
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相關代理商/技術參數 |
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|---|---|
| MRF8S21200HR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8S21200HSR5 | 功能描述:射頻無線雜項 HV8 2.1GHZ 48W NI1230HS RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| MRF8S21200HSR6 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 48W NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S23120H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8S23120HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.3GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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