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參數資料
| 型號： | MRF8S9260HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數： | 1/14頁 |
| 文件大小： | 304K |
| 代理商： | MRF8S9260HSR3 |
MRF8S9260HR3 MRF8S9260HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts,
IDQ = 1700 mA, Pout = 75 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
hD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
18.8
36.0
6.3
-39.5
940 MHz
18.7
37.0
6.2
-38.6
960 MHz
18.6
38.5
5.9
-37.1
Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point ] 260 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate- Source Voltage Range for Improved Class C Operation
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +70
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW Operation @ TC = 25°C
Derate above 25
°C
CW
280
1.5
W
W/
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°C, 75 W CW, 28 Vdc, IDQ = 1800 mA
Case Temperature 80
°C, 265 W CW, 28 Vdc, IDQ = 1100 mA
RθJC
0.37
0.31
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF8S9260H
Rev. 0, 12/2009
Freescale Semiconductor
Technical Data
920-960 MHz, 75 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF8S9260HR3
MRF8S9260HSR3
CASE 465C-02, STYLE 1
NI-880S
MRF8S9260HSR3
CASE 465B-03, STYLE 1
NI-880
MRF8S9260HR3
Freescale Semiconductor, Inc., 2009. All rights reserved.
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