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參數資料
| 型號： | MRF9045M |
| 廠商： | Motorola, Inc. |
| 英文描述： | The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | 該射頻亞微米MOSFET的線射頻功率場效應晶體管N溝道增強型MOSFET的側向 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 153K |
| 代理商： | MRF9045M |
1
MRF9045M MRF9045MR1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies up to 1.0 GHz. The high gain and broadband performance of this device
make it ideal for large–signal, common–source amplifier applications in 28 volt
base station equipment.
Typical Performance at 945 MHz, 28 Volts
Output Power – 45 Watts PEP
Power Gain – 18.5 dB
Efficiency – 41% (Two Tones)
IMD – –31 dBc
Integrated ESD Protection
Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance
Parameters
Moisture Sensitivity Level 3
RF Power Plastic Surface Mount Package
Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
+15, –0.5
156(1)
1.25(1)
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
150
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Typical)
Machine Model
M2 (Typical)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
0.8(1)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
°
C/W
(1) Simulated
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9045M/D
SEMICONDUCTOR TECHNICAL DATA
945 MHz, 45 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265–06, STYLE 1
(TO–270)
PLASTIC
REV 0
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| MRF9060MR1 | The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF9045MBR1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF9045MR1 | 制造商:Freescale Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| MRF9045NBR1 | 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF9045NR1 | 功能描述:射頻MOSFET電源晶體管 45W 1GHZ RF LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9045NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF9045 Series 945 MHz 45 W 28 V Lateral N-Channel RF Power MOSFET |
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