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參數資料
| 型號： | MRF9080 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 128K 3.3 VOLT SERIAL CONFIGURATION PROM |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 439K |
| 代理商： | MRF9080 |
1
MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3
Motorola, Inc. 2002
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband
performance of these devices make them ideal for large–signal, common–
source amplifier applications in 26 volt base station equipment.
Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
μ″
Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
–0.5, +15
Vdc
Total Device Dissipation @ T
C
=
25
°
C
Derate above 25
°
C
P
D
250
1.43
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +200
°
C
Operating Junction Temperature
T
J
200
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.7
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9080/D
SEMICONDUCTOR TECHNICAL DATA
GSM 900 MHz FREQUENCY BAND,
75 W, 26 V
LATERAL N–CHANNEL
BROADBAND RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF9080
CASE 465A–06, STYLE 1
NI–780S
MRF9080SR3, MRF9080LSR3
REV 2
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PDF描述 |
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| MRF9100 | GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9100R3 | GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9100SR3 | 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor |
| MRF9482T1 | RF MOSFETS(RF MOS場效應管) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF9080LR3 | 功能描述:射頻MOSFET電源晶體管 75W 960MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9080LR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9080LR5 | 功能描述:射頻MOSFET電源晶體管 75W 960MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9080LSR3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF9080R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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