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參數資料
| 型號： | MRF9085 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 151K |
| 代理商： | MRF9085 |
1
MRF9085 MRF9085R3 MRF9085S MRF9085SR3
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies in the 865 to 895 MHz band. The high gain and broadband performance
of these devices makes them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power = 20 Watts
Power Gain = 17.9 dB
Efficiency = 28%
Adjacent Channel Power –
750 kHz:
–45.0 dBc @ 30 kHz BW
1.98 MHz:
–60.0 dBc @ 30 kHz BW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection: Class 2 Human Body Model, Class M3
Machine Model
Ease of Design for Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units in 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
+15, –0.5
Vdc
Total Device Dissipation @ TC
=
25
°
C
Derate above 25
°
C
250
1.43
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +200
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.7
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9085/D
SEMICONDUCTOR TECHNICAL DATA
880 MHz, 90 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–04, STYLE 1
(MRF9085)
CASE 465A–04, STYLE 1
(MRF9085S)
REV 2
相關PDF資料 |
PDF描述 |
|---|---|
| MRF9085R3 | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF9085S | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF9085SR3 | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF9135L | 36K SERIAL CONFIGURATION PROM |
| MRF9135LR3 | 36K SERIAL CONFIGURATION PROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF9085LR3 | 功能描述:射頻MOSFET電源晶體管 90W 880MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9085LR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9085LR5 | 功能描述:射頻MOSFET電源晶體管 90W 880MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9085LSR3 | 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS LTP COBRA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9085LSR5 | 功能描述:射頻MOSFET電源晶體管 90W RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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