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參數(shù)資料
| 型號(hào)： | MRF949T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-75, SC-90, 3 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 298K |
| 代理商： | MRF949T1 |
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MRF949T1
SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE TRANSISTORS
f
τ = 9.0 GHz
NFmin = 1.4 dB
ICMAX = 50 mA
VCEO = 10 V
PLASTIC PACKAGE
CASE 463
(SC–90/SC–75, Tape & Reel Only)
1
Order this document by MRF949T1/D
Pin 1. Base
2. Emitter
3. Collector
2
3
ORDERING INFORMATION
Device
Package
MRF949T1
SC–90/SC75
Tape & Reel*
Marking
JL
*3,000 Units per 8 mm, 7 inch reel.
1
MOTOROLA RF/IF DEVICE DATA
NPN Silicon
Low Noise Transistors
Motorola’s MRF949 is a high performance NPN transistor designed for
use in high gain, low noise small–signal amplifiers. The MRF949 is well
suited for low voltage wireless applications. This device features a 9.0 GHz
DC current gain–bandwidth product with excellent linearity.
Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1.0 GHz, 8.0 V, 3.0 mA
High Current Gain–Bandwidth Product, fτ = 9.0 GHz, 6.0 V, 15 mA
Maximum Stable Gain, 19 dB @ 1.0 GHz, 6.0 V, 10 mA
Output Third Order Intercept, Output IP3 = 29 dBm @ 1.0 GHz,
6.0 V, 10 mA
Fully Ion–Implanted with Gold Metallization and Nitride Passivation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
10
Vdc
Collector–Base Voltage
VCBO
20
Vdc
Emitter–Base Voltage
VEBO
1.5
Vdc
Power Dissipation @ TC = 75°C
PD(max)
0.144
W
Derate linearly above TC = 75°C at
1.92
mW/
°C
Collector Current – Continuous [Note 3]
IC
50
mA
Storage Temperature
Tstg
–55 to 150
°C
Maximum Junction Temperature
TJ(max)
150
°C
NOTES: 1. Meets Human Body Model (HBM)
≤300 V and Machine Model (MM) ≤75 V.
2. ESD data available upon request.
3. For MTBF >10 years.
THERMAL CHARACTERISTIC
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction–to–Case
R
θJC
520
°C/W
NOTE:
To calculate the junction temperature use TJ = (PD x R
θJC) + TC. The case
temperature measured on collector lead adjacent to the package body.
Motorola, Inc. 1998
Rev 2
LIFETIME
BUY
LAST
ORDER
25S
EP01
LAST
SHIP
26
MAR02
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| MRF951 | 功能描述:射頻雙極小信號(hào)晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MRF9511LT1 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-143 |
| MRF951V2 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF951V3 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF951V4 | 功能描述:射頻雙極小信號(hào)晶體管 RF Bipolar Trans RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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