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參數資料
| 型號： | MRF959T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Low Noise Transistor(低噪聲晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-75, SC-90, 3 PIN |
| 文件頁數： | 1/11頁 |
| 文件大小： | 212K |
| 代理商： | MRF959T1 |
SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE TRANSISTORS
f
τ
= 9.0 GHz
NFmin = 1.3 dB
ICMAX = 100 mA
VCEO = 10 V
PLASTIC PACKAGE
CASE 463
(SC–90/SC–75, Tape & Reel Only)
1
Order this document by MRF959T1/D
Pin 1. Base
2. Emitter
3. Collector
2
3
ORDERING INFORMATION
Device
Package
MRF959T1
SC–90/SC–75
Tape & Reel*
Marking
V1
*3,000 Units per 8 mm, 7 inch reel.
1
MOTOROLA RF/IF DEVICE DATA
Motorola’s MRF959 is a high performance NPN transistor designed for
use in high gain, low noise small–signal amplifiers. The MRF959 is well
suited for low voltage applications. This device features a 9.0 GHz DC
current gain–bandwidth product with excellent linearity.
Low Noise Figure, NFmin = 1.3 dB (Typ) @ 1.0 GHz, 6.0 V, 5.0 mA
High Current Gain–Bandwidth Product, f
τ
= 9.0 GHz, 6.0 V, 30 mA
Maximum Stable Gain, 17 dB @ 1.0 GHz, 6.0 V, 10 mA
Output Third Order Intercept, Output IP3 = 30 dBm @ 1.0 GHz,
6.0 V, 30 mA
Fully Ion–Implanted with Gold Metallization and Nitride Passivation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PD(max)
10
Vdc
Collector–Base Voltage
20
Vdc
Emitter–Base Voltage
1.5
Vdc
Power Dissipation @ TC = 75
°
C
Derate linearly above TC = 75
°
C at
Collector Current – Continuous [Note 3]
0.15
2.0
W
mW/
°
C
IC
Tstg
100
mA
Storage Temperature
–55 to 150
°
C
Maximum Junction Temperature
TJ(max)
150
°
C
NOTES:
1.Meets Human Body Model (HBM)
≤
300 V and Machine Model (MM)
≤
75 V.
2.ESD data available upon request.
3.For MTBF >10 years.
THERMAL CHARACTERISTIC
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction–to–Case
R
θ
JC
500
°
C/W
NOTE:
To calculate the junction temperature use TJ = (PD x R
JC) + TC. The case
temperature measured on collector lead adjacent to the package body.
Motorola, Inc. 1998
Rev 2
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