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參數資料
| 型號： | MRFE6S8046NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN |
| 文件頁數： | 1/17頁 |
| 文件大?。?/td> | 439K |
| 代理商： | MRFE6S8046NR1 |
MRFE6S8046NR1 MRFE6S8046GNR1
1
RF Device Data
Freescale Semiconductor
‘
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier
applications.
Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout =
35.5 Watts CW
Frequency
Gps
(dB)
hD
(%)
864 MHz
19.9
58.7
880 MHz
20
58.5
894 MHz
19.8
57.7
Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 70 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced
Ruggedness
Typical Pout @ 1 dB Compression Point ] 47 Watts CW
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA,
Pout = 17.8 Watts Avg.
Frequency
Gps
(dB)
hD
(%)
Spectral
Regrowth @
400 kHz
(dBc)
Spectral
Regrowth @
600 kHz
(dBc)
EVM
(% rms)
864 MHz
19.8
43.8
61.2
70.9
2.1
880 MHz
19.9
43.6
63.4
72.5
2
894 MHz
19.8
43.1
63.7
73
2
Features
Class F Output Matched for Higher Impedances and Greater Efficiency
Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66%
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +66
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRFE6S8046N
Rev. 0, 5/2009
Freescale Semiconductor
Technical Data
864-894 MHz, 35.5 W CW, 28 V
GSM, GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1487-05, STYLE 1
TO-270 WB-4 GULL
PLASTIC
MRFE6S8046GNR1
MRFE6S8046NR1
MRFE6S8046GNR1
(Top View)
RFout/VDS
RFin/VGS
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
32
41
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRFE6S8046NR1
PARTS ARE SINGLE-ENDED
Freescale Semiconductor, Inc., 2009. All rights reserved.
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| MRFE6S9045GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 45W TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRFE6S9045NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9045 Series 880 MHz 10 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9046GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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