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參數資料
| 型號： | MRFE6S9201HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465-06, NI-780, 3 PIN |
| 文件頁數： | 1/13頁 |
| 文件大小： | 487K |
| 代理商： | MRFE6S9201HR3 |
MRFE6S9201HR3 MRFE6S9201HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 40 Watts Avg., f = 880 MHz, IS-95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.8 dB
Drain Efficiency — 31.3%
Device Output Signal PAR — 8.1 dB @ 0.01% Probability on CCDF
ACPR @ 750 kHz Offset — -46.5 dBc in 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 270 W CW
(2 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +66
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 85°C, 197 W CW
Case Temperature 75°C, 40 W CW
RθJC
0.34
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRFE6S9201H
Rev. 1, 12/2008
Freescale Semiconductor
Technical Data
MRFE6S9201HR3
MRFE6S9201HSR3
880 MHz, 40 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465A-06, STYLE 1
NI-780S
MRFE6S9201HSR3
CASE 465-06, STYLE 1
NI-780
MRFE6S9201HR3
Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRFE6S9201HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9201HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9201HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9205HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9205HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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