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參數資料
型號: MS1329
廠商: Advanced Power Technology Ltd.
英文描述: RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
中文描述: 射頻
文件頁數: 1/3頁
文件大小: 192K
代理商: MS1329
053-7067 Rev - 10-2002
MS1329
RF & MICROWAVE TRANSISTORS
VHF FM APPLICATIONS
Features
150 MHz
28 VOLTS
P
OUT
=
60W
G
P
= 7.0 dB MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1629 is an epitaxial silicon NPN transistor designed
primarily for 12.5 V Class C, AM amplifier applications in the
118 – 136 MHz and 28 V Class C ground station transmitters.
Emitter ballast resistors and gold metalitzation provide
optimum VSWR capability.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CBO
Collector- Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
P
DISS
Power Dissipation
I
C
Collector current
T
J
Junction Temperature
T
STG
Storage Temperature
Thermal Data
R
TH(J-C)
Thermal Resistance Junction-Case
Parameter
Value
65.0
35.0
4.0
75.0
6.5
+200
-65 to +150
Unit
V
V
V
W
A
°
C
°
C
2.3
°
C/W
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