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參數資料
| 型號： | MSAHX60F60A |
| 廠商： | MICROSEMI CORP-COLORADO |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT |
| 文件頁數： | 1/2頁 |
| 文件大小： | 50K |
| 代理商： | MSAHX60F60A |
MSAGX60F60A
MSAHX60F60A
600 Volts
60 Amps
2.9 Volts vce(sat)
Features
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: MSAH(G)60F60B
high frequency IGBT, low switching losses
anti-parallel FREDiode (MSAHX60F60A only)
DESCRIPTION
SYMBOL
MAX.
UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ T
J
≥
25
°
C
Collector-to-Gate Breakdown Voltage
@ T
J
≥
25
°
C, R
GS
= 1 M
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
Tj= 25
°
C
Tj=
90
°
C
Peak Collector Current, pulse width limited by T
jmax
,
Safe Operating Area (RBSOA)
@ V
GE
= 15V, L= 100
μ
H (clamped inductive
load), R
G
= 4.7
, Tj= 125
°
C, V
CE
= 0.8 x V
CES
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, MSAHX60F60A only)
Pulse Source Current (Body Diode, MSAHX60F60A only)
Thermal Resistance, Junction to Case
BV
CES
600
Volts
BV
CGR
V
GES
V
GEM
I
C25
I
C90
600
+/-20
+/-30
60
32
Volts
Volts
Volts
Amps
I
CM
I
max
120
64
Amps
Amps
P
D
T
j
T
stg
I
S
I
SM
θ
JC
300
Watts
°
C
°
C
Amps
Amps
°
C/W
-55 to +150
-55 to +150
32
100
0.4
Maximum Ratings @ 25
°
C (unless otherwise specified)
Mechanical Outline
Datasheet# MSC0298A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
COLLECTOR
EMITTER
(MS…A)
GATE (MS…B)
.A)
EMITTER (MS…B)
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