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參數資料
型號: MSARS50S20YS-1
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: 整流器
英文描述: 50 A, 200 V, SILICON, RECTIFIER DIODE, DO-217AA
封裝: HERMETIC SEALED, CERAMIC, DO-217AA, SLUGGER PACKAGE-1
文件頁數: 1/2頁
文件大小: 139K
代理商: MSARS50S20YS-1
Revision 3
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
VRRM
200
Volts
Working Peak Reverse Voltage
VRWM
200
Volts
DC Blocking Voltage
VR
200
Volts
Average Rectified Forward Current, Tc
≤ 125°C
IF(ave)
50
Amps
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
IFSM
375
Amps
Junction Temperature Range
Tj
-65 to +175
°C
Storage Temperature Range
Tstg
-65 to +175
°C
Thermal Resistance, Junction to Case:
θJC
1.0
°C/W
Mechanical Outline
Slugger
1 (DO-217AA)
MSARS50S20Y
MSARS50S20YR
200 Volts
50 Amps
2
s
Features
passivated mesa structure for very low leakage currents
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic
Low package inductance
Very low thermal resistance
Available as standard polarity (strap-to-anode, MSARS50S20Y) and
reverse polarity (strap-to-cathode: MSARS50S20YR)
Available with Space-level equivalent (add “S”-suffix to the part number)
or TX-level equivalent screening (add “V”-suffix to the part number), per
PS11.50
Add -1 suffix for jumper less and gold plate version, i.e.
MSARS50S20YS-1
Maximum Ratings @ 25
°C (unless otherwise specified)
8700 E. Thomas Road
Scottsdale, AZ 85252
PH: (480) 941-6300
FAX: (714) 372-8459
LOW VOLTAGE
DROP STANDARD
RECTIFIER
Mechanical Outline
Slugger
1 (DO-217AA)
相關PDF資料
PDF描述
MSARS50S20YRV-1 50 A, 200 V, SILICON, RECTIFIER DIODE, DO-217AA
MSARS50S20YRV 50 A, 200 V, SILICON, RECTIFIER DIODE, DO-217AA
MSARS50S20YR-1 50 A, 200 V, SILICON, RECTIFIER DIODE, DO-217AA
MSB2 1 A, SILICON, BRIDGE RECTIFIER DIODE
MSB10 1 A, SILICON, BRIDGE RECTIFIER DIODE
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