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參數資料
| 型號： | MSB1218A-RT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-70, 3 PIN |
| 文件頁數： | 1/34頁 |
| 文件大小： | 313K |
| 代理商： | MSB1218A-RT3 |
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2–720
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon General Purpose
Amplifier Transistor
This PNP Silicon Epitaxial Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications.
High hFE, 210–460
Low VCE(sat), < 0.5 V
Available in 8 mm, 7–inch/3000 Unit Tape and Reel
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V(BR)CBO
45
Vdc
Collector–Emitter Voltage
V(BR)CEO
45
Vdc
Emitter–Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current — Continuous
IC
100
mAdc
Collector Current — Peak
IC(P)
200
mAdc
DEVICE MARKING
MSB1218A–RT1 = BR
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation(1)
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
– 55 ~ + 150
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
V(BR)CEO
45
—
Vdc
Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0)
V(BR)CBO
45
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 Adc, IE = 0)
V(BR)EBO
7.0
—
Vdc
Collector–Base Cutoff Current (VCB = 20 Vdc, IE = 0)
ICBO
—
0.1
A
Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
ICEO
—
100
A
DC Current Gain(2) (VCE = 10 Vdc, IC = 2.0 mAdc)
hFE1
210
340
—
Collector–Emitter Saturation Voltage(2) (IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
—
0.5
Vdc
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
≤ 300 s, D.C. ≤ 2%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MSB1218A-RT1
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
CASE 419–02, STYLE 3
SC–70/SOT–323
Motorola Preferred Devices
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
REV 2
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