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參數(shù)資料
| 型號： | MSC82306 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.250 INCH, HERMETIC SEALED, S010, STRIPAC-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 98K |
| 代理商： | MSC82306 |
PRELIMINARY DATA
October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
.
REFRACTORY\GOLD METALLIZATION
.
VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
.
HERMETIC STRIPAC
PACKAGE
.
P
OUT
=
5.5 W MIN. WITH 9.6 dB GAIN
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
DESCRIPTION
The MSC82306 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overaly die geometry. This device
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82306 was designed for Class C Am-
plifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
PIN CONNECTION
BRANDING
82306
ORDER CODE
MSC82306
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
(T
C
≤
50C)
Value
16.7
Unit
W
Power Dissipation*
Device Current*
Collector-Supply Voltage*
900
26
mA
V
°
C
°
C
Junction Temperature
Storage Temperature
200
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
9.0
°
C/W
*Applies only to rated RF amplifier operation
MSC82306
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/4
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|---|---|
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