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參數資料
| 型號： | MSD1819A-RT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 153K |
| 代理商： | MSD1819A-RT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
This NPN Silicon Epitaxial Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323 package
which is designed for low power surface mount applications.
High hFE, 210–460
Low VCE(sat), < 0.5 V
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
60
Vdc
Collector-Emitter Voltage
50
Vdc
Emitter-Base Voltage
7.0
Vdc
Collector Current — Continuous
100
mAdc
Collector Current — Peak
200
mAdc
DEVICE MARKING
MSD1819A-RT1 = ZR
MSD1819A-ST1 = ZS
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation(1)
PD
TJ
Tstg
150
mW
Junction Temperature
150
°
C
Storage Temperature Range
–55 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage (IC = 10
μ
Adc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 10
μ
Adc, IE = 0)
Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0)
Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
DC Current Gain(2)
(VCE = 10 Vdc, IC = 2.0 mAdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
50
—
Vdc
60
—
Vdc
7.0
—
Vdc
—
0.1
μ
A
—
100
μ
A
MSD1819A-RT1
MSD1819A-ST1
(VCE = 2.0 Vdc, IC = 100 mAdc)
Collector-Emitter Saturation Voltage(2)
(IC = 100 mAdc, IB = 10 mAdc)
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
≤
300
μ
s, D.C.
≤
2%.
hFE1
hFE2
VCE(sat)
210
290
90
340
460
—
—
—
0.5
Vdc
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MSD1819A–RT1/D
SEMICONDUCTOR TECHNICAL DATA
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
Motorola Preferred Devices
CASE 419–02, STYLE 3
SC–70/SOT–323
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
REV 1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MSD1819A-RT1_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Amplifier Transistor |
| MSD1819A-RT1G | 功能描述:兩極晶體管 - BJT 100mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSD1819A-ST1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| MSD-1G | 制造商:JVC Worldwide 功能描述:1G MICRO SDCARD |
| MSD-1G-NP | 制造商:JVC Worldwide 功能描述:1G MICRO SDCARD |
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