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參數(shù)資料
| 型號(hào)： | MSD601-ST1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN General Purpose Amplifier Transistors Surface Mount |
| 中文描述： | 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 123K |
| 代理商： | MSD601-ST1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
60
Vdc
Collector–Emitter Voltage
50
Vdc
Emitter–Base Voltage
7.0
Vdc
Collector Current — Continuous
100
mAdc
Collector Current — Peak
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
TJ
Tstg
200
mW
Junction Temperature
150
°
C
Storage Temperature
–55 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 10
μ
Adc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10
μ
Adc, IC = 0)
Collector–Base Cutoff Current (VCB = 45 Vdc, IE = 0)
Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
DC Current Gain(1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
50
—
Vdc
60
—
Vdc
7.0
—
Vdc
—
0.1
μ
Adc
—
100
nAdc
MSD601–RT1
MSD601–ST1
(VCE = 2.0 Vdc, IC = 100 mAdc)
Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc)
1. Pulse Test: Pulse Width
≤
300
μ
s, D.C.
≤
2%.
hFE1
hFE2
VCE(sat)
210
290
90
340
460
—
—
—
0.5
Vdc
DEVICE MARKING
Marking Symbol
YR
X
MSD601–RT1
YS
X
MSD601–ST1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MSD601–RT1/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 318D–03, STYLE 1
SC–59
2
1
3
COLLECTOR
3
2
BASE
1
EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSD602-RT1 | NPN General Purpose Amplifier Transistor Surface Mount |
| MSD602-RT1 | NPN General Purpose Amplifier Transistor Surface Mount |
| MSD602RT1 | NPN General Purpose Amplifier Transistor Surface Mount |
| MSE08AZ60_1J35D | Mask Set Errata |
| MT3S36T | TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSD-601ST1G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN General Purpose Amplifier Transistors Surface Mount |
| MSD601-ST1G | 功能描述:兩極晶體管 - BJT SS GP XSTR NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSD602 | 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:NPN General Purpose Amplifier Transistor Surface Mount |
| MSD602RT1 | 制造商:NA 功能描述: |
| MSD602-RT1 | 功能描述:兩極晶體管 - BJT 500mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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