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參數資料
| 型號： | MSK3001 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 317K |
| 代理商： | MSK3001 |
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Drain-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Forward Transconductance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
N-Channel (Q1,Q3,Q5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-CHANNEL (Q2,Q4,Q6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BODY DIODE
91mJ
210mJ
+175°C MAX
-55°C to +150°C
-55°C to +125°C
300°C MAX
Single Pulse Avalanche Energy
(Q1,Q3,Q5)
(Q2,Q4,Q6)
Junction Temperature
Storage Temperature
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds)
Drain to Source Voltage
Drain to Gate Voltage
(R
GS
=1M
)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Thermal Resistance
(Junction to Case)
ABSOLUTE MAXIMUM RATINGS
V
DSS
V
DGDR
V
GS
I
D
I
DM
R
TH-JC
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T
J
T
ST
T
C
T
LD
100V MAX
100V MAX
±20V MAX
5.6A MAX
22A MAX
6°C/W
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V
GS
=0 I
D
=0.25mA (All Transistors)
V
DS
=100V V
GS
=0V (Q1,Q3,Q5)
V
DS
=-100V V
GS
=0V (Q2,Q4,Q6)
V
GS
=±20V V
DS
=0 (All Transistors)
V
DS
=V
GS
I
D
=250μA (Q1,Q3,Q5)
V
DS
=V
GS
I
D
=250μA (Q2,Q4,Q6)
V
GS
=10V I
D
=5.6A (Q1,Q3,Q5)
V
GS
=-10V I
D
=-3.4A (Q2,Q4,Q6)
V
GS
=10V I
D
=5.6A (Q1,Q3,Q5)
V
GS
=10V I
D
=-3.4A (Q2,Q4,Q6)
V
DS
=25V I
D
=5.7A (Q1,Q3,Q5)
V
DS
=-50V I
D
=-3.4A (Q2,Q4,Q6)
I
D
=5.7A
V
DS
=80V
V
GS
=10V
V
DD
=50V
I
D
=5.7A
R
G
=22
R
D
=8.6
V
GS
=0V
V
DS
=25V
f=1MHz
I
D
=-6.8A
V
DS
=-80V
V
GS
=-10V
V
DD
=-50V
I
D
=-6.8A
R
G
=18
R
D
=7.1
V
GS
=0V
V
DS
=-25V
f=1MHz
I
S
=5.5A V
GS
=0V (Q1,Q3,Q5)
I
S
=-5.6A V
GS
=0V (Q2,Q4,Q6)
I
S
=5.7A di/dt=100A/μS (Q1,Q3,Q5)
I
S
=-6.8A di/dt=100A/μS (Q2,Q4,Q6)
I
S
=5.7A di/dt=100A/μS (Q1,Q3,Q5)
I
S
=-6.8A di/dt=100A/μS (Q2,Q4,Q6)
Parameter
Units
MSK3001
Test Conditions
V
μA
μA
nA
V
V
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
nS
nS
μC
μC
Min.
100
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-
-
2.0
-2.0
-
-
-
-
2.7
1.5
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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-
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-
-
-
-
Typ.
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-
-
-
-
-
0.18
0.37
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-
-
-
-
-
-
4.5
23
32
23
330
92
54
-
-
-
9.6
29
21
25
390
170
45
1.3
-1.6
99
100
0.39
0.33
Max.
-
25
-100
±100
4.0
-4.0
0.30
0.75
0.21
0.60
-
-
25
4.8
11
-
-
-
-
-
-
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18
3.0
9.0
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-
-
-
-
-
-
-
-
150
200
0.58
0.66
ELECTRICAL SPECIFICATIONS
2
1
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
NOTES:
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
T
A
=25°C unless otherwise specified.
4
2
Rev. B 7/00
相關PDF資料 |
PDF描述 |
|---|---|
| MSK3002 | H-BRIDGE MOSFET POWER MODULE |
| MSK3003 | 30V N-Channel PowerTrench MOSFET |
| MSK3015 | 30V N-Channel PowerTrench MOSFET |
| MSK3017 | 30V N-Channel PowerTrench MOSFET |
| MSK3018 | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MSK3002 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:H-BRIDGE MOSFET POWER MODULE |
| MSK3003 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THREE PHASE BRIDGE MOSFET POWER MODULE |
| MSK3004 | 制造商:MSK 制造商全稱:M.S. Kennedy Corporation 功能描述:H-BRIDGE MOSFET POWER MODULE |
| MSK3013 | 制造商:MSK 制造商全稱:M.S. Kennedy Corporation 功能描述:QUAD N-CHANNEL MOSFET POWER MODULE |
| MSK3014 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:H-BRIDGE MOSFET POWER MODULE |
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