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參數(shù)資料
型號(hào)： MSK3002
廠商： Electronic Theatre Controls, Inc.
英文描述： H-BRIDGE MOSFET POWER MODULE
中文描述： H橋MOSFET功率模塊
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 356K
代理商： MSK3002
N-CHANNEL (Q2, Q3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time 1
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance 1
Output Capacitance of Sensing Cells 1
Current Sensing Ratio 1
P-CHANNEL (Q1, Q4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time 1
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance 1
BODY DIODE
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
I
D
= 17A
V
DS
= 48V
V
GS
= 10V
V
DD
= 30V
I
D
= 17A
R
G
= 18
R
D
= 1.7
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
I
D
= 17A
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but
are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4 T
A
= 25°C unless otherwise specified.
2
NOTES:
V
DSS
V
DGDR
Drain to Source Voltage 55V MAX
Drain to Gate Voltage
(RGS = 1 M
) 55V MAX
Gate to Source Voltage
(Continuous) ±20V MAX
Continuous Current 10A MAX
Pulsed Current 25A MAX
Thermal Resistance
(Junction to Case) 7.9°C/W
Sense Current - Continuou 13 mA
Sense Current Peak 33 mA MAX
V
GS
I
D
I
DM
R
TH-JC
I
M
I
MM
MAX
Rev. C 7/00
ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
Single Pulse Avalanche Energy
(Q1,Q4) 6.0J
(Q2,Q3) 71 mJ
JunctionTemperature
Storage Temperature -55°C to +150°C
Case Operating Temperature Range -55°C to +125°C
Lead Temperature Range
(10Seconds) 300°C MAX
T
J
T
ST
T
C
T
LD
+175°CMAX
Parameter
Test Conditions 4
Drain-Source Breakdown Voltage
Drain-Mirror Breakdown Voltage
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source on Resistance
2
Drain-Source on Resistance
3
Forward Transconductance
1
Forward on Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge
1
I
S
= 17A V
GS
= 0V (Q2, Q3)
I
S
= -7.2A V
GS
= 0V (Q1, Q4)
I
S
= 17A di/dt = 100A/μS (Q2, Q3)
I
S
= -7.2A di/dt = 100A/μS (Q1, Q4)
I
S
= 17A di/dt = 100A/μS (Q2, Q3)
I
S
= -7.2A di/dt = 100A/μS (Q1, Q4)
V
GS
= 0V
V
DS
= -25V
f = 1 MHz
V
DD
= -28V
I
D
= -7.2A
R
G
= 24
R
D
= 3.7
I
D
= -7.2A
V
DS
= -44V
V
GS
= -10V
V
GS
= 0 I
D
= 0.25 mA (All Transistors)
V
GS
= 0 V
DS
= 55V, (Q2, Q3)
V
DS
= 55V V
GS
= 0V, (Q2, Q3)
V
DS
= -55V V
GS
= 0V, (Q1, Q4)
V
GS
= ±20V V
DS
= 0V (All Transistors)
V
DS
= V
GS
I
D
= 250 μA (Q2, Q3)
V
DS
= V
GS
I
D
= 250 μA (Q1, Q4)
V
GS
= 10V I
D
= 10A (Q2, Q3)
V
GS
= -10V I
D
= -7.2A (Q1, Q4)
V
GS
= 10V I
D
= 10A (Q2, Q3)
V
GS
= -10V I
D
= -7.2A (Q1, Q4)
V
DS
= 25V I
D
= 10A (Q2, Q3)
V
DS
= -25V I
D
= -7.2A (Q1, Q4)
55
55
-
-
-
2.0
-2.0
-
-
-
-
5.8
2.5
-
-
-
-
-
-
-
-
-
-
-
740
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12
59
25
38
720
360
75
14
-
-
-
25
-25
±100
4.5
-4.5
0.20
0.28
0.10
0.175
-
-
24
6.3
9
-
-
-
-
-
-
-
-
820
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
-1.6
87
47
0.29
0.084
-
-
180
71
0.60
0.13
V
V
nS
nS
μC
μC
-
-
-
13
55
23
37
350
170
92
19
5.1
10
-
-
-
-
-
-
-
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
μA
μA
nA
V
V
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
pF
r
Units
Typ.
Max.
Min.
MSK 3002
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Drain-Source Leakage Current
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相關(guān)PDF資料
PDF描述
MSK3003 30V N-Channel PowerTrench MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSK3003 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THREE PHASE BRIDGE MOSFET POWER MODULE
MSK3004 制造商:MSK 制造商全稱:M.S. Kennedy Corporation 功能描述:H-BRIDGE MOSFET POWER MODULE
MSK3013 制造商:MSK 制造商全稱:M.S. Kennedy Corporation 功能描述:QUAD N-CHANNEL MOSFET POWER MODULE
MSK3014 制造商:未知廠家 制造商全稱:未知廠家 功能描述:H-BRIDGE MOSFET POWER MODULE
MSK3015 制造商:MSK 制造商全稱:M.S. Kennedy Corporation 功能描述:THREE PHASE BRIDGE MOSFET POWER MODULE
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