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參數資料
型號: MSP1PMT4626E3
廠商: MICROSEMI CORP
元件分類: 齊納二極管
英文描述: 5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA
封裝: ROHS COMPLIANT, DO-216, POWERMITE-2
文件頁數: 1/4頁
文件大?。?/td> 113K
代理商: MSP1PMT4626E3
POWERMITE
TM
Low Noise 1 Watt Zener Diodes
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2005
5-06-2005 REV G
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1PMT4614e3 thru 1PMT4627e3,
1PMT4099e3 thru 1PMT4135e3
1PMT461
4-2
7
&
1PMT409
9-4
135
DESCRIPTION
APPEARANCE
This Microsemi Powermite
surface mount low noise Zener package series
provides a higher power handling capability that are also RoHS compliant.
In addition to its size advantages, Powermite
package features include a
full-metallic bottom that eliminates the possibility of solder flux entrapment
during assembly, and a unique locking tab acts as an efficient heat path
from die to mounting plane for external heat sinking with very low thermal
resistance junction to case (bottom).
Its innovative design makes this
device ideal for use with automatic insertion equipment.
DO-216
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Surface mount equivalent to JEDEC registered
1N4099 thru 1N4135 and 1N4614 thru 1N4627
series except with additional power capability
RoHS compliant
Options for screening in accordance with Mil-PRF-
19500/435 for JAN, JANTX, JANTXV and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example,
designate MX1PMT4099 for a JANTX (consult factory
for Tin-Lead plating if required).
Optional 100% avionics screening available by
adding MA prefix for 100% temperature cycle,
thermal impedance, and 24 hour HTRB testing
(consult factory for Tin-Lead plating if required).
Extensive selection from 1.8 to 100 V
Regulates voltage over a broad operating current
and temperature range
Low noise density (1-3 kHz) at test current
Low reverse leakage current
Tight tolerances available in plus or minus 2% or 1%
with C or D suffix respectively
Hermetically sealed surface mount package
Nonsensitive to ESD per MIL-STD-750 Method 1020
Compatible with automatic insertion equipment
Full metallic bottom eliminates flux entrapment
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating and Storage Temperatures: -55
°C to +150°C
Steady-State Power: 1.0 watt at TC < 120
oC where
TC is case bottom temperature at mounting plane, or
0.5 watts at TA = 30
C (ambient temperature) when
mounted on FR4 PC board as described for thermal
resistance (also see power deratings in Figure 1)
Thermal Resistance: 30°C/W junction to case
(bottom) and 240°C/W junction to ambient on FR4
PC board (1 oz copper) with recommended footprint
(see last page)
Forward voltage: 1.1 Volts @ 200 mA
Solder Temperatures: 260°C for 10 s (max)
CASE: Void-free transfer molded thermosetting epoxy
compound meeting UL94V-0
FINISH: Annealed matte-Tin plating over copper and
readily solderable per MIL-STD-750 method 2026
(consult factory for Tin-Lead plating)
POLARITY: Cathode designated by Tab 1 (bottom)
MARKING: Three numerical digits of P/N and a dot
(see next page listing)
WEIGHT: 0.016 grams (approx.)
Package dimensions on last page
Tape & Reel option: Standard per EIA-481-B
3000 on 7 inch reel and 12,000 on 13” reel
相關PDF資料
PDF描述
MV1PMT4118E3 27 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA
MX1PMT4117DE3 25 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA
MX1PMT4618E3 2.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA
MQSAC8.0E3 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
M6060C-E3/45 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
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