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參數資料
型號: MSPUPS540E3
廠商: MICROSEMI CORP
元件分類: 整流器
英文描述: 5 A, 40 V, SILICON, RECTIFIER DIODE
封裝: ROHS COMPLIANT, PLASTIC, POWERMITE 3, 3 PIN
文件頁數: 1/6頁
文件大小: 310K
代理商: MSPUPS540E3
UPS540e3
5 A Schottky Barrier Rectifier
Microsemi
DESCRIPTION
This UPS540e3 in the Powermite3
package is a high efficiency Schottky
rectifier that is also RoHS compliant offering high current/power capabilities
previously found only in much larger packages. They are ideal for SMD
applications that operate at high frequencies.
In addition to its size
advantages, the Powermite3
package includes a full metallic bottom that
eliminates the possibility of solder flux entrapment during assembly and a
unique locking tab act as an efficient heat path to the heat-sink mounting.
Its innovative design makes this device ideal for use with automatic insertion
equipment.
IMPORTANT: Forthemostcurrentdata,consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25 C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
RMS Reverse Voltage
V R (RMS)
28
V
Average Rectified Output Current
Io
5
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on Rated Load@ Tc =90 C
IFSM
100
A
Storage Temperature
TSTG
-55 to +150
C
Junction Temperature
TJ
-55 to +125
C
THERMAL CHARACTERISTICS
Thermal Resistance
Junction-to-case (bottom)
RθJC
3.2
C/ Watt
Junction to ambient (1)
RθJA
65
C/ Watt
(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print
Powermite 3
KEY FEATUR ES
Very low thermal resistance package
RoHS Compliant with e3 suffix part
number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking
bottom metal tab
Low forward voltage
Full metallic bottom eliminates flux
entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with
MIL-PRF-19500 for JAN, JANTX,
JANTXV, and JANS are available by
adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For
example, designate MXUPS540e3 for a
JANTX (consult factory for Tin-Lead
plating).
Optional 100% avionics screening
available by adding MA prefix for 100%
temperature cycle, thermal impedance
and 24 hours HTRB (consult factory for
Tin-Lead plating)
APPLICATIONS/BENEFITS
Switching and Regulating Power
Supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery
oscillations to reduce need for EMI
filtering
Charge Pump Circuits
Reduces reverse recovery loss with low
IRM
Small foot print
190 X 270 mils (1:1 Actual size)
See mounting pad details on pg 3
MECHANICAL & PACKAGING
CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory
for Tin-Lead plating)
POLARITY: See figure (left)
MARKING: S540
WEIGHT: 0.072 gram (approx.)
Package dimension on last page
Tape & Reel option: 16 mm tape per
Standard EIA-481-B, 5000 on 13” reel
WWW
.Microse
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.CO
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UU
PP
SS
33
44
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EE
33
Copyright
2005
5-19-05 Rev C
Page 1
相關PDF資料
PDF描述
MUR120E3 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC
MUR140-E3 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC
MUR160 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC
MUR160-E3 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC
MUR440E3 4 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
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