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參數資料
| 型號： | MT18HTF12872DG-40EXX |
| 元件分類： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| 封裝： | DIMM-240 |
| 文件頁數： | 1/35頁 |
| 文件大小： | 717K |
| 代理商： | MT18HTF12872DG-40EXX |
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PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
09005aef80e934a6
HTF18C64_128_256x72DG_A.fm - Rev. A 10/03 EN
1
2003 Micron Technology, Inc.
512MB, 1GB, 2GB (x72, DR, REGISTERED)
PC2-3200, PC2-4300, 240-Pin DDR2 SDRAM DIMM
PRELIMINARY
DDR2 SDRAM
REGISTERED DIMM
MT18HTF6472D – 512MB
MT18HTF12872D – 1GB (ADVANCE)
MT18HTF25672D – 2GB(ADVANCE)
For the latest data sheet, please refer to the Micron Web
Features
240-pin, dual in-line memory module (DIMM)
Fast data transfer rates: PC2-3200 or PC2-4300
Utilizes 400 MT/s and 533 MT/s DDR SDRAM
components
512MB (64 Meg x 72), 1GB (128 Meg x 72)
2GB (256 Meg x 72)
VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
VDDSPD = +1.7V to +3.6V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
Four-bit prefetch architecture
Differential clock inputs (CK, CK#)
Commands entered on each rising CK edge
DQS edge-aligned with data for READs
DQS center-aligned with data for WRITEs
DLL to align DQ and DQS transitions with CK
Four or eight internal device banks for concurrent
operation
Data mask (DM) for masking write data
Programmable CAS# latency (CL): 3 and 4
Posted CAS# additive latency (AL): 0, 1, 2, 3, and 4
WRITE latency = READ latency - 1 tCK
Programmable burst lengths: 4 or 8
READ burst interrupt supported by another READ
WRITE burst interrupt supported by another WRITE
Adjustable data-output drive strength
Concurrent auto precharge option is supported
Auto Refresh (CBR) and Self Refresh Mode
7.8125s maximum average periodic refresh
interval
64ms, 8,192-cycle refresh
Figure 1: 240-Pin DIMM (MO-206 R/C “B”)
Off-chip driver (OCD) impedance calibration
On-die termination (ODT)
Serial Presence Detect (SPD) with EEPROM
Gold edge contacts
NOTE:
1. Consult factory for availability of lead-free prod-
ucts.
2. CL = CAS (READ) Latency.
OPTIONS
MARKING
Package
240-pin DIMM (standard)
G
240-pin DIMM (lead-free)1
Y
Frequency/CAS Latency2
3.75ns @ CL = 4 (DDR2-533)
-53E
5.0ns @ CL = 3 (DDR2-400)
-40E
Table 1:
Address Table
512MB
1GB
2GB
Refresh Count
8K
Row Addressing
8K (A0–A12)
16K (A0–A13)
Device Bank Addressing
4 (BA0, BA1)
8 (BA0, BA1, BA2)
Device Configuration
256Mb (32 Meg x 8)
512Mb (64 Meg x 8)
1Gb (128 Meg x 8)
Column Addressing
1K (A0–A9)
Module Rank Addressing
2 (S0#, S1#)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MT18HTF12872DY-40EA1 | 制造商:Micron Technology Inc 功能描述:1GB 128MX72 SDRAM DDR II MODUL |
| MT18HTF12872DY-40EB1 | 功能描述:MODULE SDRAM DDR2 1GB 240DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT18HTF12872DY-40ED3 | 功能描述:MODULE DDR2 1GB 240-DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT18HTF12872DY-53EB1 | 功能描述:MODULE SDRAM DDR2 1GB 240DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT18HTF12872DY-53ED3 | 功能描述:MODULE DDR2 1GB 240-DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
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