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參數資料
| 型號： | MT29F4G08FABWGXXXXET |
| 元件分類： | PROM |
| 英文描述： | 512M X 8 FLASH 2.7V PROM, PDSO48 |
| 封裝： | TSOP1-48 |
| 文件頁數： | 1/57頁 |
| 文件大小： | 730K |
| 代理商： | MT29F4G08FABWGXXXXET |
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Products and specifications discussed herein are subject to change by Micron without notice.
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
Features
09005aef818a56a7 pdf/09005aef81590bdd source
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2gb_nand_m29b__1.fm - Rev. C 5/05 EN
1
2004 Micron Technology, Inc. All rights reserved.
NAND Flash Memory
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
Features
Organization:
Page size:
x8: 2,112 bytes (2,048 + 64 bytes)
x16: 1,056 words (1,024 + 32 words)
Block size: 64 pages (128K + 4K bytes)
Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;
8Gb: 8,192 blocks
Read performance:
Random read: 25s
Sequential read: 30ns (3V x8 only)
Write performance:
Page program: 300s (typ)
Block erase: 2ms (typ)
Endurance: PROGRAM/ERASE cycles
(with ECC and invalid block mapping)
First block (block address 00h) guaranteed to be
valid without ECC (up to 1,000 PROGRAM/ERASE
cycles)
VCC: 2.7V–3.6V
Automated PROGRAM and ERASE
Basic NAND command set:
PAGE READ, RANDOM DATA READ, READ ID,
READ STATUS, PROGRAM PAGE, RANDOM
DATA INPUT, PROGRAM PAGE CACHE MODE,
INTERNAL DATA MOVE, INTERNAL DATA MOVE
with RANDOM DATA INPUT, BLOCK ERASE,
RESET
New commands:
PAGE READ CACHE MODE
READ UNIQUE ID (contact factory)
READ ID2 (contact factory)
Operation status byte provides a software method of
detecting:
PROGRAM/ERASE operation completion
PROGRAM/ERASE pass/fail condition
Write-protect status
Ready/busy# (R/B#) pin provides a hardware
method of detecting PROGRAM or ERASE cycle
completion
PRE pin: prefetch on power up
WP# pin: hardware write protect
Figure 1:
48-PIN TSOP Type 1
Options
Marking
Density:
2Gb (single die)
MT29F2GxxAAB
4Gb (dual-die stack)
MT29F4GxxBAB
8Gb (quad-die stack)
MT29F8GxxFAB
Device width:
x8
MT29Fxx08x
x16
MT29Fxx16x
Configuration: # of die # of CE# # of R/B#
11
1
A
21
1
B
42
2
F
VCC: 2.7V–3.6V
A
Second generation die
B
Package:
48 TSOP type I (lead-free plating)
WP
48 TSOP type I (contact factory)
WG
Operating temperature:
Commercial (0–70°C)
—
Extended temperature
(-40°C to +85°C)
ET
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MT29F4G16ABADAH4 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features |
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