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參數(shù)資料
型號(hào)： MT46V32M8BG-6AT:G
元件分類(lèi)： DRAM
英文描述： 32M X 8 DDR DRAM, 0.7 ns, PBGA60
封裝： (8 X 14) MM, LEAD FREE,PLASTIC, FBGA-60
文件頁(yè)數(shù)： 1/93頁(yè)
文件大小： 3632K
Products and specifications discussed herein are subject to change by Micron without notice.
256Mb: x4, x8, x16 DDR SDRAM
Features
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
1
2003 Micron Technology, Inc. All rights reserved.
Double Data Rate (DDR) SDRAM
MT46V64M4 – 16 Meg x 4 x 4 banks
MT46V32M8 – 8 Meg x 8 x 4 banks
MT46V16M16 – 4 Meg x 16 x 4 banks
Features
VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)
Bidirectional data strobe (DQS) transmitted/
received with data, that is, source-synchronous data
capture (x16 has two – one per byte)
Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
DLL to align DQ and DQS transitions with CK
Four internal banks for concurrent operation
Data mask (DM) for masking write data
(x16 has two – one per byte)
Programmable burst lengths (BL): 2, 4, or 8
Auto refresh
– 64ms, 8192-cycle(Commercial & Industrial)
– 16ms, 8192-cycle (Automotive)
Self refresh (not available on AT devices)
Longer-lead TSOP for improved reliability (OCPL)
2.5V I/O (SSTL_2-compatible)
Concurrent auto precharge option supported
tRAS lockout supported (tRAP = tRCD)
Notes: 1. Only available on Revision F and G.
2. Only available on Revision K.
3. Not recommended for new designs.
4. Contact Micron for availability.
Options
Marking
Configuration
– 64 Meg x 4 (16 Meg x 4 x 4 banks)
64M4
– 32 Meg x 8 (8 Meg x 8 x 4 banks)
32M8
– 16 Meg x 16 (4 Meg x 16 x 4 banks)
16M16
Plastic package – OCPL
– 66-pin TSOP
TG
– 66-pin TSOP (Pb-free)
P
Plastic package
– 60-ball FBGA (8mm x 14mm)
– 60-ball FBGA (8mm x 14mm) (Pb-free)
BG1
– 60-ball FBGA (8mm x 12.5mm)
CV2
– 60-ball FBGA (8mm x 12.5mm)
(Pb-free)
CY2
Timing – cycle time
– 5ns @ CL = 3 (DDR400B)
-5B
– 6ns @ CL = 2.5 (DDR333) FBGA only
-6
– 6ns @ CL = 2.5 (DDR333) TSOP only
-6T
– 7.5ns @ CL = 2 (DDR266)
-75E1
– 7.5ns @ CL = 2 (DDR266A)
-75Z1
– 7.5ns @ CL = 2.5 (DDR266B)
-751
Self refresh
– Standard
None
– Low-power self refresh
L
Temperature rating
– Commercial (0°C to +70°C)
None
– Industrial (–40°C to +85°C)
IT
– Automotive (–40°C to +105°C)
AT4
Revision
– x4, x8
:G3
– x16
:F3
– x4, x8, x16
:K
相關(guān)PDF資料
PDF描述
M29F800FB55N3E2 512K X 16 FLASH 5V PROM, 55 ns, PDSO48
MC12L1NZGF ROTARY SWITCH-12POSITIONS, SP12T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED
MD00S1NCQF ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, THROUGH HOLE-STRAIGHT
MD06L1NZGD ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED
MD06L2NCQD ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, THROUGH HOLE-STRAIGHT
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