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參數(shù)資料
型號(hào): MT4S07
廠商: Toshiba Corporation
英文描述: VHF~UHF Band Low Noise Amplifier Applications
中文描述: 甚高頻?超高頻波段低噪聲放大器的應(yīng)用
文件頁數(shù): 1/3頁
文件大小: 103K
代理商: MT4S07
MT4S07
2002-01-23
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S07
VHF~UHF Band Low Noise Amplifier Applications
Low Noise Figure: NF = 1.5dB
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz)
High Gain: |S21e|
2
= 9.5dB
(V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz)
Maximum Ratings
(Ta 25°C)
項(xiàng)
號(hào)
単位
Collector-base voltage
V
CBO
10
V
Collector-emitter voltage
V
CEO
5
V
Emitter-base voltage
V
EBO
1.5
V
Collector current
I
C
25
mA
Base current
I
B
10
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
125
C
Storage temperature range
Tstg
55~125
C
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
Type name
A D
2
1
3
4
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