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參數資料
| 型號： | MT58L128L32D1 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 128K x 32，3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb，3.3V輸入/輸出，流水線式，雙循環取消選擇，同步脈沖靜態存儲器) |
| 中文描述： | 128K的x 32,3.3六/輸出流水線，雙氰胺SyncBurst的SRAM（4MB，在3.3V的輸入/輸出，流水線式，雙循環取消選擇，同步脈沖靜態存儲器） |
| 文件頁數： | 1/24頁 |
| 文件大小： | 425K |
| 代理商： | MT58L128L32D1 |
1
4Mb: 256K x 18, 128K x 32/36 3.3V I/O Pipelined, DCD SyncBurst SRAM
MT58L256L18D1_2.p65 – Rev 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
3.3V I/O PIPELINED, DCD SYNCBURST SRAM
PRELIMINARY
FEATURES
Fast clock and OE# access times
Single +3.3V +0.3V/-0.165V power supply (V
DD
)
Separate +3.3V isolated output buffer supply
(V
DD
Q)
SNOOZE MODE for reduced-power standby
Common data inputs and data outputs
Individual BYTE WRITE control and GLOBAL
WRITE
Three chip enables for simple depth expansion and
address pipelining
Clock-controlled and registered addresses, data
I/Os and control signals
Internally self-timed WRITE cycle
Burst control pin (interleaved or linear burst)
Automatic power-down for portable applications
165-pin FBGA package
100-pin TQFP package
Low capacitive bus loading
x18, x32, and x36 versions available
OPTIONS
Timing (Access/Cycle/MHz)
3.5ns/6ns/166 MHz
4.0ns/7.5ns/133 MHz
5ns/10ns/100 MHz
MARKING*
-6
-7.5
-10
Configurations
256K x 18
128K x 32
128K x 36
MT58L256L18D1
MT58L128L32D1
MT58L128L36D1
Packages
100-pin TQFP
165-pin FBGA
T
F
Operational Temperature Range
Commercial (0°C to +70°C)
None
Part Number Example:
MT58L256L18D1T-6
*A Part Marking Guide for the FBGA devices can be found on Micron’s
http://www.micronsemi.com/support/index.html.
MT58L256L18D1, MT58L128L32D1,
MT58L128L36D1
3.3V V
DD
, 3.3V I/O, Pipelined, Double-
Cycle Deselect
4Mb SYNCBURST
SRAM
**JEDEC-standard MS-026 BHA (LQFP).
100-Pin TQFP**
165-Pin FBGA
(Preliminary Package Data)
GENERAL DESCRIPTION
The Micron
SyncBurst
SRAM family employs
high-speed, low-power CMOS designs that are fabri-
cated using an advanced CMOS process.
Micron’s 4Mb SyncBurst SRAMs integrate a 256K x
18, 128K x 32, or 128K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single clock
input (CLK). The synchronous inputs include all ad-
dresses, all data inputs, active LOW chip enable (CE#),
two additional chip enables for easy depth expansion
(CE2, CE2#), burst control inputs (ADSC#, ADSP#,
ADV#), byte write enables (BWx#) and global write
(GW#).
相關PDF資料 |
PDF描述 |
|---|---|
| MT58L128L36D1 | 128K x 36，3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb，3.3V輸入/輸出，流水線式，雙循環取消選擇，同步脈沖靜態存儲器) |
| MT58L128L32P1 | 128K x 32，Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環取消選擇，同步脈沖靜態存儲器) |
| MT58L128L36P1 | 128K x 36，Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環取消選擇，同步脈沖靜態存儲器) |
| MT58L128V32P1 | 128K x 32， Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環取消選擇，同步脈沖靜態存儲器) |
| MT58L256L18P1 | 256K x 18,Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環取消選擇，同步脈沖靜態存儲器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MT58L128L32D1F-6 | 制造商:Micron Technology Inc 功能描述: |
| MT58L128L32D1T-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L128L32D1T10A | 制造商:Micron Technology Inc 功能描述: |
| MT58L128L32D1T-7.5 | 制造商:Cypress Semiconductor 功能描述:128KX32 SRAM PLASTIC TQFP 3.3V |
| MT58L128L32DT-75 | 制造商:Micron Technology Inc 功能描述: |
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