欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): MT5C6401
廠商: Austin Semiconductor, Inc
英文描述: 64K x 1 SRAM SRAM MEMORY ARRAY
中文描述: 64K的× 1 SRAM的存儲(chǔ)器陣列
文件頁(yè)數(shù): 1/10頁(yè)
文件大小: 145K
代理商: MT5C6401
SRAM
MT5C6401
Austin Semiconductor, Inc.
MT5C6401
Rev. 1.0 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
FEATURES
Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns
Battery Backup: 2V data retention
High-performance, low-power CMOS double-metal
process
Single +5V (+10%) Power Supply
Easy memory expansion with CE\
All inputs and outputs are TTL compatible
OPTIONS
Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
MARKING
-12
-15
-20
-25
-35
-45*
-55*
-70*
Package(s)
Ceramic DIP (300 mil)
C
No. 105
Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
Military (-55
o
C to +125
o
C)
IT
XT
2V data retention/low power
L
*Electrical characteristics identical to those provided for the 35ns
access devices.
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-86015
MIL-STD-883
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS designs using a four-transistor
memory cell. Austin Semiconductor SRAMs are fabricated
using double-layer metal, double-layer polysilicon
technology.
For flexibility in high-speed memory applications, Austin
Semiconductor offers chip enable (CE\) on all organizations.
This enhancement can place the outputs in High-Z for
additional flexibility in system design. The X1 configuration
features separate data input and output.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is
accomplished when WE\ remains HIGH and CE\ goes LOW.
The device offers a reduced power standby mode when
disabled. This allows system designs to achieve low standby
power requirements.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL compatible.
64K x 1 SRAM
SRAM MEMORY ARRAY
For more products and information
please visit our web site at
www.austinsemiconductor.com
22-Pin DIP (C)
(300 MIL)
1
2
3
4
5
6
7
8
9
10
11
22
21
20
19
18
17
16
15
14
13
12
A0
A1
A2
A3
A4
A5
A6
A7
Q
WE\
Vss
Vcc
A15
A14
A13
A12
A11
A10
A9
A8
D
CE\
相關(guān)PDF資料
PDF描述
MT6C03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
MT6C04AE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
MT6L03AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
MT6L03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
MT6L04AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT5C6401DJ25 制造商:MICRON 功能描述:*
MT5C6404-15 制造商:MT 功能描述:Static RAM, 16Kx4, 22 Pin, Plastic, DIP
MT5C6404-25 制造商:MICRO 功能描述:
MT5C6404DJ-20 制造商:Micron Technology Inc 功能描述:
MT5C6405DJ-20 制造商:MICRO CHIP 功能描述:
主站蜘蛛池模板: 徐闻县| 丰城市| 元谋县| 大宁县| 白银市| 福清市| 万州区| 巴中市| 绥宁县| 普定县| 遂宁市| 双峰县| 定远县| 平遥县| 加查县| 田阳县| 临安市| 乌兰县| 新郑市| 和静县| 永州市| 滕州市| 青铜峡市| 松潘县| 屯留县| 马山县| 阿勒泰市| 准格尔旗| 禹城市| 眉山市| 娱乐| 宝坻区| 宁化县| 龙山县| 湘乡市| 大邑县| 南漳县| 全椒县| 南康市| 沂南县| 涿鹿县|