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參數資料
| 型號： | MT5C6408F-883C |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 8K x 8 SRAM |
| 中文描述： | 8K的× 8的SRAM |
| 文件頁數： | 1/12頁 |
| 文件大小： | 100K |
| 代理商： | MT5C6408F-883C |
SRAM
MT5C6408
Austin Semiconductor, Inc.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
FEATURES
High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
Battery Backup: 2V data retention
High-performance, low-power CMOS double-metal
process
Single +5V (+10%) Power Supply
Easy memory expansion with CE1\ and CE2
All inputs and outputs are TTL compatible
OPTIONS
Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
MARKING
-12
-15
-20
-25
-35
-45
-55*
-70*
Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
Ceramic Flatpack
C
E C
F
No. 108
No. 204
No. 302
Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
Military (-55
o
C to +125
o
C)
IT
XT
2V data retention/low power
L
*Electrical characteristics identical to those provided for the
45ns access devices.
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-38294
MIL-STD-883
28-Pin DIP (C)
(300 MIL)
28-Pin Flat Pack (F)
28-Pin LCC (EC)
GENERAL DESCRIPTION
The MT5C6408, 8K x 8 SRAM, employs high-speed,
low-power CMOS technology, eliminating the need for clocks
or refreshing. These SRAM’s have equal access and cycle
times.
For flexibility in high-speed memory applications,
Austin Semiconductor offers dual chip enables (CE1\, CE2) and
output enable (OE\) capability. These enhancements can place
the outputs in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.
Reading is accomplished when WE\ and CE2 remain HIGH and
CE1\ and OE\ go LOW. The device offers a reduced power
standby mode when disabled. This allows system designs to
achieve low standby power requirements.
These devices operate from a single +5V power sup-
ply and all inputs and outputs are fully TTL compatible.
8K x 8 SRAM
SRAM MEMORY ARRAY
For more products and information
please visit our web site at
www.austinsemiconductor.com
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28
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26
25
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15
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
Vcc
WE\
CE2
A8
A9
A11
OE\
A10
CE1\
DQ8
DQ7
DQ6
DQ5
DQ4
1
2
3
4
5
6
7
8
9
1 0
1 1
1 2
1 3
1 4
2 8
2 7
2 6
2 5
2 4
2 3
2 2
2 1
2 0
1 9
1 8
1 7
1 6
1 5
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
Vcc
WE\
CE2
A8
A9
A11
OE\
A10
CE1\
DQ8
DQ7
DQ6
DQ5
DQ4
A
12 13 14 15 16 17 18
V
D
5
6
7
8
9
1 0
1 1
2 5
2 4
2 3
2 2
2 1
2 0
1 9
A5
A4
A3
A2
A1
A0
DQ0
A8
A9
A11
OE\
A10
CE1\
DQ7
D
D
D
D
D
A
A
N
V
W
C
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