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參數資料
| 型號： | MT5VDDT1672LAY-262XX |
| 元件分類： | DRAM |
| 英文描述： | 16M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | LEAD FREE, DIMM-184 |
| 文件頁數： | 1/29頁 |
| 文件大小： | 589K |
| 代理商： | MT5VDDT1672LAY-262XX |
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PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
pdf: 09005aef808143d9, source: 09005aef806e1c40
DD5C8_16_32x72AG.fm - Rev. E 9/04 EN
1
2004 Micron Technology, Inc. All rights reserved.
64MB, 128MB, 256MB (x72, ECC, SR)
184-PIN DDR SDRAM UDIMM
DDR SDRAM
UNBUFFERED DIMM
MT5VDDT872A – 64MB
MT5VDDT1672A – 128MB
MT5VDDT3272A – 256MB
For the latest data sheet, please refer to the Micron Web
Features
JEDEC-standard 184-pin, dual in-line memory
module (DDR DIMM)
Utilizes 266 MT/s and 333MT/s DDR SDRAM
components
Fast data transfer rates: PC2100 or PC2700
64MB (8 Meg x 72), 128MB (16 Meg x 72), and
256MB (32 Meg x 72)
Supports ECC error detection and correction
VDD= VDDQ = +2.5V
VDDSPD = +2.3V to +3.6V
2.5V I/O (SSTL_2 compatible)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Bidirectional data strobe (DQS) transmitted/
received with data—i.e., source-synchronous data
capture
Differential clock inputs (CK and CK#)
Four internal device banks for concurrent operation
Selectable burst lengths: 2, 4, or 8
Auto precharge option
Auto Refresh and Self Refresh Modes
15.625s (64MB); 7.8125s (128MB, 256MB)
maximum average periodic refresh interval
Serial Presence Detect (SPD) with EEPROM
Selectable READ CAS latency for maximum
compatibility
Gold edge contacts
Figure 1: 184-Pin DIMM (MO-206)
NOTE:
1. Consult Micron for product availability.
2. CL = Device CAS (READ) Latency.
OPTIONS
MARKING
Package
184-pin DIMM (standard)
G
184-pin DIMM (lead-free)1
Y
Memory Clock, Speed, CAS Latency (CL)2
6ns, 333 MT/s (167 MHz), CL = 2.5
-335
7.5ns, 266 MT/s (133 MHz), CL = 2
-2621
7.5ns, 266 MT/s (133 MHz), CL = 2
-26A1
7.5ns, 266 (133 MHz), CL = 2.5
-265
Self Refresh
Standard
None
Low Power
L
Table 1:
Address Table
64MB
128MB
256MB
Refresh Count
4K
8K
Row Addressing
4K (A0 –A11)
8K (A0 –A12)
Device Bank Addressing
4 (BA0, BA1)
Device Configuration
128Mb (8 Meg x 16)
256Mb (16 Meg x 16)
512Mb (32 Meg x 16)
Column Addressing
512 (A0 –A8)
1K (A0 –A9)
Module Rank Addressing
1 (S0#)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MT5VDDT3272AG-335F1 | 功能描述:MODULE DDR 256MB 184-DIMM RoHS:否 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT5VDDT3272AG-40BF1 | 功能描述:MODULE DDR 256MB 184-DIMM RoHS:否 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT5VDDT3272AY-335F1 | 功能描述:MODULE DDR 256MB 184-DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT5VDDT3272AY-40BF1 | 功能描述:MODULE DDR 256MB 184-DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT5VDDT3272HG-335F2 | 功能描述:MODULE DDR 256MB 200-SODIMM RoHS:否 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
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