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參數(shù)資料
| 型號： | MTB16N25ET4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-02, D2PAK-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 274K |
| 代理商： | MTB16N25ET4 |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
MTB16N25E/D
MTB16N25E
Designer’s Data Sheet
TMOS EFET.
High Energy Power FET
D2PAK for Surface Mount
NChannel EnhancementMode Silicon
Gate
The D2PAK package has the capability of housing a larger die than
any existing surface mount package which allows it to be used in
applications that require the use of surface mount components with
higher power and lower RDS(on) capabilities. This advanced TMOS
EFET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
draintosource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
http://onsemi.com
TMOS POWER FET
16 AMPERES, 250 VOLTS
RDS(on) = 0.25 OHM
CASE 418B02, Style 2
D2PAK
D
S
G
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