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參數資料
| 型號： | MTB60N06HD |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 279K |
| 代理商： | MTB60N06HD |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Publication Order Number:
MTB60N06HD/D
MTB60N06HD
Preferred Device
Power MOSFET
60 Amps, 60 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 30
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp ≤ 10 μs)
ID
IDM
60
42.3
180
Adc
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1)
PD
125
1.0
2.5
Watts
W/°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 60 Apk, L = 0.3 mH, RG = 25 Ω)
EAS
540
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient, when mounted
with the minimum recommended pad size
RθJC
RθJA
1.0
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
TL
260
°C
1. When mounted with the minimum recommended pad size.
MARKING DIAGRAM
& PIN ASSIGNMENT
T60N06HD
YWW
1
Gate
4
Drain
2
Drain
3
Source
60 AMPERES
60 VOLTS
RDS(on) = 14 mΩ
Device
Package
Shipping
ORDERING INFORMATION
MTB60N06HD
D2PAK
50 Units/Rail
D2PAK
CASE 418B
STYLE 2
1
2
3
4
http://onsemi.com
NChannel
D
S
G
T60N06HD = Device Code
Y
= Year
WW
= Work Week
MTB60N06HDT4
D2PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
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相關代理商/技術參數 |
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|---|---|
| MTB60N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB60N06J3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N -Channel Enhancement Mode Power MOSFET |
| MTB60N10E7L | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB60N10E7LT4 | 制造商:Motorola Inc 功能描述: |
| MTB60P06H8 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-Channel Logic Level Enhancement Mode Power MOSFET |
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