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參數(shù)資料
| 型號： | MTD1312T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 115K |
| 代理商： | MTD1312T4 |
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 1
1
Publication Order Number:
MTD1312/D
MTD1312
Advance Information
Power MOSFET
25 Amps, 30 Volts
N–Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain–to–source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters, and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode Is Characterized for Use In Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp
≤ 10 ms)
VGS
VGSM
± 20
Vdc
Vpk
Operating and Storage Temperature Range
TJ, Tstg
– 55 to
150
°C
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
25 AMPERES
30 VOLTS
RDS(on) = 16 m
Device
Package
Shipping
ORDERING INFORMATION
MTD1312T4
DPAK
2500 Tape & Reel
CASE 369A
DPAK
STYLE 2
PIN ASSIGNMENT
http://onsemi.com
N–Channel
D
S
G
MARKING
DIAGRAM
Y
= Year
WW
= Work Week
MTD1312 = Device Code
YWW
MTD
1312
1
2
3
4
1
Gate
3
Source
2
Drain
4
Drain
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