- 您現在的位置：買賣IC網 > PDF目錄98046 > MTD20P03HDLT4 (MOTOROLA INC) 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | MTD20P03HDLT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/12頁 |
| 文件大小： | 244K |
| 代理商： | MTD20P03HDLT4 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
HDTMOS E-FET.
High Density Power FET
DPAK for Surface Mount
P–Channel Enhancement–Mode Silicon Gate
This advanced HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
30
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
±15
± 20
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100
°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
19
12
57
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TC = 25°C, when mounted with the minimum recommended pad size
PD
75
0.6
1.75
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 19 Apk, L = 1.1 mH, RG = 25 )
EAS
200
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size
R
θJC
R
θJA
R
θJA
1.67
100
71.4
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTD20P03HDL/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
MTD20P03HDL
TMOS POWER FET
LOGIC LEVEL
19 AMPERES
30 VOLTS
RDS(on) = 0.099 OHM
Motorola Preferred Device
D
S
G
CASE 369A–13, Style 2
DPAK
相關PDF資料 |
PDF描述 |
|---|---|
| MTD20P06HDLT4 | 20 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD2955ET4 | 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD2955VT4 | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD2N40E | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD2N50E1 | 2 A, 500 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MTD20P06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM |
| MTD20P06HDL | 制造商:ON Semiconductor 功能描述:MOSFET P LOGIC D-PAK |
| MTD20P06HDLT4 | 功能描述:MOSFET P-CH 60V 15A DPAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| MTD214 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Ethernet Encoder/Decoder and 10BaseT Transceiver with Built-in Waveform Shaper |
| MTD2525J | 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:DMOS Microstepping Dual PWM Motor Driver |
發布緊急采購，3分鐘左右您將得到回復。