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參數資料
| 型號： | MTD6N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
| 中文描述： | 6 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 211K |
| 代理商： | MTD6N10E |
1
Motorola, Inc. 1995
!
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
Replaces MTD5N10
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
100
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
100
Vdc
±
20
±
40
Vdc
Vpk
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
6.0
4.5
18
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C, when mounted to minimum recommended pad size
PD
40
0.32
1.75
Watts
W/
°
C
Watts
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 6.0 Apk, L = 3.0 mH, RG =25
)
50
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient, when mounted to minimum recommended pad size
R
θ
JC
R
θ
JA
R
θ
JA
TL
3.13
100
71.4
°
C/W
Maximum Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MTD6N10E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
6.0 AMPERES
100 VOLTS
RDS(on) = 0.400 OHM
Motorola Preferred Device
D
S
G
CASE 369A–13, Style 2
DPAK
相關PDF資料 |
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|---|---|
| MTD6N10 | POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
| MTD6N15 | TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM |
| MTD6N15T4 | Power Field Effect Transistor DPAK for Surface Mount |
| MTD6N15-1 | Power Field Effect Transistor DPAK for Surface Mount |
| MTD8N06E | TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MTD6N10E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD6N15 | 制造商:Rochester Electronics LLC 功能描述: |
| MTD6N15-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power Field Effect Transistor DPAK for Surface Mount |
| MTD6N15T4 | 功能描述:MOSFET 150V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N15T4G | 功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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