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參數(shù)資料
| 型號(hào)： | MTD6N15 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power Field Effect Transistor DPAK for Surface Mount(功率場效應(yīng)晶體管) |
| 中文描述： | 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 70K |
| 代理商： | MTD6N15 |
Semiconductor Components Industries, LLC, 2006
July, 2006 Rev. 4
1
Publication Order Number:
MTD6N15/D
MTD6N15
Power Field Effect Transistor
DPAK for Surface Mount
NChannel EnhancementMode Silicon Gate
This TMOS Power FET is designed for high speed, low loss power
switching applications such as switching regulators, converters,
solenoid and relay drivers.
Features
Silicon Gate for Fast Switching Speeds
Low R
DS(on)
— 0.3 Max
Rugged — SOA is Power Dissipation Limited
SourcetoDrain Diode Characterized for Use With Inductive Loads
Low Drive Requirement — V
GS(th)
= 4.0 V Max
Surface Mount Package on 16 mm Tape
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
150
Vdc
DrainGate Voltage (R
GS
= 1.0 M )
V
DGR
150
Vdc
GateSource Voltage
Continuous
NonRepetitive (t
p
≤
50 s)
V
GS
V
GSM
±
20
±
40
Vdc
Vpk
Drain Current Continuous
Drain Current
Pulsed
I
D
I
DM
6.0
20
Adc
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
20
0.16
W
W/
°
C
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C (Note 1)
P
D
1.25
0.01
W
W/
°
C
Total Power Dissipation @ T
A
= 25
°
C
(Note 1)
Derate above 25
°
C (Note 2)
P
D
1.75
0.014
W
W/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JC
R
JA
R
JA
6.25
100
71.4
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
MARKING DIAGRAM
& PIN ASSIGNMENTS
Y
WW
6N15
G
= Year
= Work Week
= Device Code
= PbFree Package
CASE 369C
DPAK
(Surface Mount)
STYLE 2
D
S
G
Y
T
6
MTD6N15T4
DPAK
2500/Tape & Reel
4 Drain
3
Source
1
Gate
2
Drain
NCHANNEL
1 2
3
4
150 V
0.3
R
DS(on)
MAX
6.0 A
I
D
MAX
V
(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MTD6N15T4G
DPAK
(PbFree)
2500/Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD6N15-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power Field Effect Transistor DPAK for Surface Mount |
| MTD6N15T4 | 功能描述:MOSFET 150V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N15T4G | 功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N15T4GV | 功能描述:MOSFET Single N-Ch 150V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N20 | 制造商:ON Semiconductor 功能描述:MOSFET N D-PAK |
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