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參數資料
| 型號： | MTDF1N03HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 225K |
| 代理商： | MTDF1N03HDR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistor
Micro8
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8
devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
Miniature Micro8 Surface Mount Package — Saves Board Space
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
DEVICE MARKING
ORDERING INFORMATION
BB
Device
Reel Size
Tape Width
Quantity
BB
MTDF1N03HDR2
13
″
12 mm embossed tape
4000 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTDF1N03HD/D
Motorola, Inc. 1997
MTDF1N03HD
DUAL TMOS
POWER MOSFET
2.0 AMPERES
30 VOLTS
RDS(on) = 0.120 OHM
CASE 846A–02, Style 2
Micro8
Motorola Preferred Device
D
S
G
Source1
Gate1
Source2
Gate2
1
2
3
4
8
7
6
5
Top View
Drain1
Drain2
REV 4
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| MTDF2N06HD | 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTM23224 | 1200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MTDF1P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
| MTDF2N06HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: |
| MTD-H5 | 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:QuickCarrier? USB-D 零件狀態:Not Recommended For New Designs 功能:收發器，HSPA，調制解調器 調制或協議:HSPA+ 頻率:850MHz，900MHz，1.7GHz，1.9GHz，2.1GHz 應用:- 接口:USB 靈敏度:- 功率 - 輸出:- 數據速率（最大值）:21Mbps 特性:USB 供電 電壓 - 電源:5V，USB 標準包裝:10 |
| MTD-H5-2.0 | 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:- 零件狀態:有效 功能:- 調制或協議:HSPA+ 頻率:850MHz，900MHz，1.7GHz，1.8GHz，1.9GHz，2.1GHz 應用:通用 接口:USB 靈敏度:- 功率 - 輸出:- 數據速率（最大值）:21Mbps 特性:- 電壓 - 電源:5V 標準包裝:10 |
| MTDK1S6R | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N-CHANNEL MOSFET (dual transistors) |
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