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參數資料
| 型號： | MTP1306 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM |
| 中文描述： | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 1/8頁 |
| 文件大小： | 171K |
| 代理商： | MTP1306 |
1
Motorola, Inc. 1997
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating area are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
30
Vdc
— Non–Repetitive (tp
≤
10 ms)
±
20
±
20
Vdc
Vpk
Drain Current
— Continuous
— Continuous @ 100
°
C
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
75
59
225
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
150
1.2
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25
)
280
mJ
Thermal Resistance — Junction–to–Case
— Junction–to–Ambient
R
θ
JC
R
θ
JA
0.8
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 5.0 seconds
TL
260
°
C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc.
Order this document
by MTP1306/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
75 AMPERES
30 VOLTS
RDS(on) = 0.0065 OHM
CASE 221A–06
TO–220AB
相關PDF資料 |
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| MTP15N06V | TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
| MTV32N20E | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
| MTW16N40E | TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM |
| MTW20N50E | TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM |
| MTW23N25E | TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
相關代理商/技術參數 |
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