- 您現在的位置：買賣IC網 > PDF目錄385641 > MTP2P50E (ON SEMICONDUCTOR) Power MOSFET 2 Amps, 500 Volts PDF資料下載
參數資料
| 型號： | MTP2P50E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 2 Amps, 500 Volts |
| 中文描述： | 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 103K |
| 代理商： | MTP2P50E |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
1
Publication Order Number:
MTP2P50E/D
MTP2P50E
Preferred Device
Power MOSFET
2 Amps, 500 Volts
P–Channel TO–220
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage–blocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
500
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp
≤
10 ms)
500
Vdc
VGS
VGSM
±
20
±
40
Vdc
Vpk
Drain Current – Continuous
Drain Current
– Continuous @ 100
°
C
Drain Current
– Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
2.0
1.6
6.0
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
75
0.6
Watts
W/
°
C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
150
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 4.0 Apk, L = 10 mH, RG = 25
)
Thermal Resistance
– Junction to Case
– Junction to Ambient
EAS
80
mJ
R
θ
JC
R
θ
JA
TL
1.67
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10
seconds
260
°
C
D
S
G
2 AMPERES
500 VOLTS
RDS(on) = 6
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP2P50E
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
P–Channel
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTP2P50E
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
MTP2P50E
LLYWW
1
Gate
3
Source
2
Drain
相關PDF資料 |
PDF描述 |
|---|---|
| MTP30N08M | POWER FIELD EFFECT TRANSISTOR |
| MTP50P03HDL | Power MOSFET 50 Amps, 30 Volts, Logic Level(50A,30V,TO220,P溝道功率MOSFET) |
| MTW32N20E | Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET) |
| MTW8N60E | Power MOSFET 8 Amps, 600 Volts N-Channel(8A，600V，N溝道增強型功率MOS場效應管) |
| MUN2111T1 | Bias Resistor Transistors(偏置電阻晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MTP2P50E_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 500 Volts |
| MTP2P50EG | 功能描述:MOSFET 500V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP2S-E10-C | 功能描述:電纜束帶 Multiple Tie Plate 2 Bund, M-S ties #10 RoHS:否 制造商:Phoenix Contact 產品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強度: |
| MTP2S-E10-C39 | 功能描述:電纜束帶 Mutiple Tie Plate, 2 Bundle, M-S Ties, # RoHS:否 制造商:Phoenix Contact 產品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強度: |
| MTP2S-E6-C | 功能描述:電纜束帶 Mutiple Tie Plate, 2 Bundle, M-S Ties, # RoHS:否 制造商:Phoenix Contact 產品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強度: |
發布緊急采購，3分鐘左右您將得到回復。