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參數(shù)資料
| 型號： | MTP60N05 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM |
| 中文描述： | TMOS是功率場效應(yīng)晶體管50伏特，60安培的RDS（on）\u003d 0.014歐姆 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 166K |
| 代理商： | MTP60N05 |
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
50
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
50
Vdc
— Non–Repetitive (tp
≤
10 ms)
±
15
±
20
Vdc
Vpk
Drain Current — Continuous
— Continuous @ 100
°
C
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
60
42
180
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
150
1.0
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 175
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25
)
540
mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θ
JC
R
θ
JA
1.0
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 5 Seconds
TL
260
°
C
E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTP60N05HDL/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
60 AMPERES
50 VOLTS
RDS(on) = 0.014 OHM
Motorola Preferred Device
D
S
G
CASE 221A–06, Style 5
TO–220AB
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| MTP8N06 | TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP60N05HDL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM |
| MTP60N06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM |
| MTP60N06HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM |
| MTP60N06HD_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP60N10E7L | 制造商:ON Semiconductor 功能描述: |
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