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參數資料
| 型號： | MTSF1P02HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICRO-8 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 283K |
| 代理商： | MTSF1P02HDR2 |
Semiconductor Components Industries, LLC, 2005
February, 2005 Rev. XXX
1
Publication Order Number:
MTSF1P02HD/D
MTSF1P02HD
Preferred Device
Advance Information
Power MOSFET
1 Amp, 20 Volts
PChannel Micro8
t
These Power MOSFET devices are capable of withstanding high
energy in the avalanche and commutation modes and the draintosource
diode has a very low reverse recovery time. Micro8 devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dcdc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Miniature Micro8 Surface Mount Package Saves Board Space
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
Ultra Low R
DS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
1 AMPERE
20 VOLTS
RDS(on) = 160 mW
D
S
G
1
8
Device
Package
Shipping
ORDERING INFORMATION
MTSF1P02HDR2
Micro8
4000 Tape & Reel
Micro8
CASE 846A
STYLE 1
http://onsemi.com
AB
MARKING
DIAGRAM
WW
= Date Code
Source
1
2
3
4
8
7
6
5
Top View
Source
Gate
Drain
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
PChannel
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| MTSF1P02HDR2 | 1800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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| MTSF2P02HDR2 | 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTSF2P03HDR2 | 2700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTSF2P03HDR2 | 2700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MTSF2P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM |
| MTSF2P03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM |
| MTSF2P03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 4.1A 8-Pin SOP T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述:MOSFET Transistor, P-Channel, SO 制造商:ON Semiconductor 功能描述:MOSFET Transistor, P-Channel, SO 制造商:MOTOROLA 功能描述: |
| MTSF3203 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM |
| MTSF3N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM |
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