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參數資料
型號: MTSF3N02HD
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM
中文描述: 3800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數: 1/12頁
文件大小: 235K
代理商: MTSF3N02HD
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
Micro8
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8
devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
Miniature Micro8 Surface Mount Package — Saves Board Space
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
Ultra Low RDS(on) Provides Higher Efficiency and Extends Bat-
tery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
DEVICE MARKING
ORDERING INFORMATION
AC
Device
Reel Size
13
Tape Width
12 mm embossed tape
Quantity
4000 units
MTSF3N02HDR2
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTSF3N02HD/D
SINGLE TMOS
POWER MOSFET
4.0 AMPERES
20 VOLTS
RDS(on) = 0.040 OHM
CASE 846A–02, Style 1
Micro8
Motorola Preferred Device
D
S
G
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
REV 4
相關PDF資料
PDF描述
MTSF3N03HD SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM
MTV16N50E TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
MTW10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
MTW10N40E TMOS E-FET POWER FIELD EFFECT TRANSISTOR
MTW14N50E CONNECTOR ACCESSORY
相關代理商/技術參數
參數描述
MTSF3N02HDR2 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 20V 6.1A 8-Pin Micro T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk
MTSF3N03HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM
MTSF3N03HDR2 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 5.7A 8-Pin SOP T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk
MTSF3N03HDR2G 功能描述:MOSFET NFET 30V 3A 40MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTSFAF500FMEF-001 功能描述:ACCY MOUNT SURF NMO 5M FMEF RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標準包裝:1 系列:*
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