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參數資料
| 型號： | MTW32N20E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
| 中文描述： | 32 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁數： | 1/8頁 |
| 文件大小： | 205K |
| 代理商： | MTW32N20E |
1
Motorola TMOS Power MOSFET Transistor Device Data
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N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
ID
ID
IDM
200
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
200
Vdc
±
20
Vdc
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
32
19
128
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
180
1.44
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 50 Vdc, VGS = 10 Vpk, IL = 32 Apk, L = 1.58 mH, RG = 25
)
810
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
0.7
40
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Sil Pad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTW32N20E/D
SEMICONDUCTOR TECHNICAL DATA
CASE 340K–01, Style 1
TO–247AE
TMOS POWER FET
32 AMPERES
200 VOLTS
RDS(on) = 0.075 OHM
Motorola Preferred Device
D
S
G
相關PDF資料 |
PDF描述 |
|---|---|
| MTW32N25 | TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW32N25E | TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW35N15E | TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
| MUN2111T1 | TIP, CONICAL SHARP 0.4MM |
| MUN2131T1 | Bias Resistor Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MTW32N20EG | 功能描述:MOSFET NFET T0247 200V 32A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTW32N25 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW32N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW33N10E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTW35N15E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
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