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參數(shù)資料
| 型號： | MTY25N60E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM |
| 中文描述： | 25 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 236K |
| 代理商： | MTY25N60E |
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain–to–source diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM motor controls,
and other inductive loads. The avalanche energy capability is
specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
Avalanche Energy Specified
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
600
Vdc
Drain–Gate Voltage (RGS = 1 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
600
Vdc
±
20
±
40
Vdc
Vpk
Drain Current — Continuous @ TC = 25
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
ID
IDM
25
65
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
300
2.38
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 25 Apk, L = 10 mH, RG = 25
)
3000
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
0.42
40
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTY25N60E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
25 AMPERES
600 VOLTS
RDS(on) = 0.21 OHM
CASE 340G–02, STYLE 1
TO–264
Motorola Preferred Device
D
S
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTY30N50 | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
| MTY30N50E | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
| MTY55N20E | TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTY300A | 制造商:LIUJING 制造商全稱:LIUJING 功能描述:可控硅、晶閘管 |
| MTY30N50 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
| MTY30N50E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTY55N20E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM |
| MTZ.0S.045.065 | 制造商:LEMO connectors 功能描述: |
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