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參數資料
| 型號： | MUN2134T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Bias Resistor Transistors |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, PLASTIC, CASE 318D-04, SC-59, 3 PIN |
| 文件頁數： | 1/13頁 |
| 文件大小： | 117K |
| 代理商： | MUN2134T1G |
Semiconductor Components Industries, LLC, 2006
September, 2006 Rev. 17
Publication Order Number:
MUN2111T1/D
1
MUN2111T1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The
Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a baseemitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The
use of a BRT can reduce both system cost and board space. The device
is housed in the SC59 package which is designed for low power
surface mount applications.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating Human Body Model: Class 1
Machine Model: Class B
The SC59 Package Can be Soldered Using Wave or Reflow
The Modified GullWinged Leads Absorb Thermal Stress During
Soldering Eliminating the Possibility of Damage to the Die
PbFree Packages are Available
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector Base Voltage
V
CBO
50
Vdc
Collector Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
= 25
°
C
Derate above 25
°
C
P
D
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
°
C/W
Thermal Resistance,
JunctiontoAmbient
R
JA
540 (Note 1)
370 (Note 2)
°
C/W
Thermal Resistance,
JunctiontoLead
R
JL
264 (Note 1)
287 (Note 2)
°
C/W
Junction and Storage Temperature
Range
T
J
, T
stg
55 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 inch Pad.
SC59
CASE 318D
PLASTIC
MARKING DIAGRAM
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
PIN 2
BASE
(INPUT)
R1
R2
2
1
3
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
See device marking table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
1
6x M
6x
M
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MUN2135T1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Cut TR (SOS) 制造商:ON Semiconductor 功能描述:REEL / PNP DIGITAL TRANSISTOR (B |
| MUN2136 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN2136T1 | 功能描述:TRANS BRT PNP 100MA 50V SC59 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路﹐預偏壓式 系列:- 標準包裝:10,000 系列:- 晶體管類型:NPN - 預偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應商設備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
| MUN2136T1G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bias Resistor Transistors |
| MUN2137 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
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