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參數資料
| 型號： | MUN22xxT1 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | NPN SILICON BIAS RESISTOR TRANSISTOR |
| 中文描述： | NPN硅偏置電阻晶體管 |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 263K |
| 代理商： | MUN22XXT1 |
PIN3
COLLECTOR
(OUTPUT)
PIN1
EMITTER
(GROUND)
PIN2
BASE
(INPUT)
R1
R2
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is designed
for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Base Voltage
VCBO
VCEO
IC
PD
50
Vdc
Collector–Emitter Voltage
50
Vdc
Collector Current
Total Power Dissipation @ TA = 25
°
C(1)
Derate above 25
°
C
100
mAdc
*
200
1.6
mW
mW/
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
R
θ
JA
TJ, Tstg
TL
625
°
C/W
Operating and Storage Temperature Range
–65 to +150
°
C
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
260
10
°
C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1(2)
MUN2216T1(2)
MUN2230T1(2)
MUN2231T1(2)
MUN2232T1(2)
MUN2233T1(2)
MUN2234T1(2)
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MUN2211T1/D
SEMICONDUCTOR TECHNICAL DATA
NPN SILICON
BIAS RESISTOR
TRANSISTOR
Motorola Preferred Devices
CASE 318D–03, STYLE 1
(SC–59)
2
1
3
REV 4
相關PDF資料 |
PDF描述 |
|---|---|
| MUN2231T1 | NPN SILICON BIAS RESISTOR TRANSISTOR |
| MUN2234T1 | LED Lamp; Bulb Size:5mm; LED Color:Yellow/Green; Luminous Intensity:8.7mcd; Viewing Angle:50 ; Forward Current:20mA; Forward Voltage:2.1V; Operating Temperature Range:-55 C to ? C; Leaded Process Compatible:No RoHS Compliant: No |
| MUN2215T1 | NPN SILICON BIAS RESISTOR TRANSISTOR |
| MUN2216T1 | NPN SILICON BIAS RESISTOR TRANSISTOR |
| MUN2214T1 | NPN SILICON BIAS RESISTOR TRANSISTOR |
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| MUN5111DW_09 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual Bias Resistor Transistor |
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