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參數資料
| 型號： | MUN5115T3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-70, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 196K |
| 代理商： | MUN5115T3 |
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1
Publication Order Number:
MUN5111T1/D
MUN5111T1 SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–70/SOT–323 package which is designed for low power surface
mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation
@ TA = 25°C (1.)
Derate above 25
°C
PD
150
1.2
mW
mW/
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1 (2.)
MUN5116T1 (2.)
MUN5130T1 (2.)
MUN5131T1 (2.)
MUN5132T1 (2.)
MUN5133T1 (2.)
MUN5134T1 (2.)
MUN5135T1 (2.)
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
6M
10
22
47
10
4.7
1.0
2.2
4.7
22
2.2
10
22
47
∞
1.0
2.2
4.7
47
3000/Tape & Reel
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
http://onsemi.com
CASE 419
SC–70/SOT–323
STYLE 3
Preferred devices are recommended choices for future use
and best overall value.
PNP SILICON
BIAS RESISTOR
TRANSISTORS
3
2
1
PIN3
COLLECTOR
(OUTPUT)
PIN2
EMITTER
(GROUND)
PIN1
BASE
(INPUT)
R1
R2
相關PDF資料 |
PDF描述 |
|---|---|
| MUN5112T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5113T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5132T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5116T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5212T3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MUN5116 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN5116DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon |
| MUN5116DW1G | 制造商:ON Semiconductor 功能描述: |
| MUN5116DW1T1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5116DW1T1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT Dual PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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