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參數資料
| 型號： | MUN5130DW1 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Dual Bias Resistor Transistors |
| 中文描述： | 雙偏置電阻晶體管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 216K |
| 代理商： | MUN5130DW1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon Surface Mount Transistors with
Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
bias network consisting of two resistors; a series base resistor and a base–emitter
resistor. These digital transistors are designed to replace a single device and its
external resistor bias network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices
are housed in the SOT–363 package which is ideal for low–power surface mount
applications where board space is at a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol
Value
Unit
Collector–Base Voltage
VCBO
VCEO
IC
–50
Vdc
Collector–Emitter Voltage
–50
Vdc
Collector Current
–100
mAdc
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
R
θ
JA
TJ, Tstg
PD
833
°
C/W
Operating and Storage Temperature Range
Total Package Dissipation @ TA = 25
°
C(1)
DEVICE MARKING AND RESISTOR VALUES: MUN5111DW1T1 SERIES
–65 to +150
°
C
*
150
mW
Device
Marking
R1 (K)
R2 (K)
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1(2)
MUN5116DW1T1(2)
MUN5130DW1T1(2)
MUN5131DW1T1(2)
MUN5132DW1T1(2)
MUN5133DW1T1(2)
MUN5134DW1T1(2)
MUN5135DW1T1(2)
0A
0B
0C
0D
0E
0F
0G
0H
0J
0K
0L
0M
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MUN5111DW1T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
CASE 419B–01, STYLE 1
SOT–363
Q1
R1
R2
R2
R1
Q2
(4)
(5)
(6)
(1)
(2)
(3)
123
65
4
REV 2
相關PDF資料 |
PDF描述 |
|---|---|
| MUN5130DW1T1 | Dual Bias Resistor Transistors |
| MUN5111DW1T1 | Dual Bias Resistor Transistors |
| MUN5131DW1T1 | Dual Bias Resistor Transistors |
| MUN5112DW1T1 | Dual Bias Resistor Transistors |
| MUN5132DW1T1 | Dual Bias Resistor Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MUN5130DW1T1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5130DW1T1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5130T1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5130T1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5131 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
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