- 您現在的位置：買賣IC網 > PDF目錄383647 > MUN5136T1 (樂山無線電股份有限公司) Bias Resistor Transistor PDF資料下載
參數資料
| 型號： | MUN5136T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Bias Resistor Transistor |
| 中文描述： | 偏置電阻晶體管 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 205K |
| 代理商： | MUN5136T1 |
LESHAN RADIO COMPANY, LTD.
MUN5111T1 Series–1/11
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
1
3
2
MUN5111T1
SERIES
CASE 419, STYLE 3
SOT–323 (SC–70)
PNP SILICON
BIAS RESISTOR
TRANSISTORS
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page2 of this data
sheet.
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system cost
and board space. The device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Symbol
P
D
Max
Unit
mW
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
618 (Note 1)
403 (Note 2)
280 (Note 1)
332 (Note 2)
–55 to +150
°C/W
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
R
θ
JA
°C/W
R
θ
JL
°C/W
T
J
, T
stg
°C
PIN 1
BASE
(INPUT)
PIN 2
COLLECTOR
(OUTPUT)
PIN 3
EMITTER
(GROUND)
R
1
R
2
MARKING DIAGRAM
6X
M
6 X =Specific Device Code
X
=(See Marking Table)
M
=Date Code
相關PDF資料 |
PDF描述 |
|---|---|
| MUN52xxDW1T1 | Dual Bias Resistor Transistors |
| MUN52xxDW1T1 | Dual Bias Resistor Transistors |
| MUN5211DW1T1 | Dual Bias Resistor Transistors |
| MUN5237DW1T1 | Dual Bias Resistor Transistors |
| MUR120-B | 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MUN5136T1G | 制造商:ON Semiconductor 功能描述:SS SC70 BR XSTR PNP 50V - Tape and Reel |
| MUN5137 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN5137DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon |
| MUN5137DW1T1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5137DW1T1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT Dual PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。