欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): MUN5213T3
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SC-70, 3 PIN
文件頁(yè)數(shù): 1/39頁(yè)
文件大小: 377K
代理商: MUN5213T3
PIN3
COLLECTOR
(OUTPUT)
PIN2
EMITTER
(GROUND)
PIN1
BASE
(INPUT)
R1
R2
2–769
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device
and its external resistor bias network. The BRT (Bias Resistor Transistor)
contains a single transistor with a monolithic bias network consisting of two
resistors; a series base resistor and a base-emitter resistor. The BRT eliminates
these individual components by integrating them into a single device. The use
of a BRT can reduce both system cost and board space. The device is housed
in the SC-70/SOT-323 package which is designed for low power surface mount
applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC-70/SOT-323 package can be soldered using
wave or reflow. The modified gull-winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25
°C
PD
*150
1.2
mW
mW/
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
R
θJA
833
°C/W
Operating and Storage Temperature Range
TJ, Tstg
– 65 to +150
°C
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
TL
260
10
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1(2)
8A
8B
8C
8D
8E
10
22
47
10
22
47
MUN5216T1(2)
MUN5230T1(2)
MUN5231T1(2)
MUN5232T1(2)
MUN5233T1(2)
MUN5234T1(2)
8F
8G
8H
8J
8K
8L
4.7
1.0
2.2
4.7
22
1.0
2.2
4.7
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN SILICON
BIAS RESISTOR
TRANSISTORS
Motorola Preferred Devices
CASE 419-02, STYLE 3
SC-70/SOT-323
MUN5211T1
SERIES
1
2
3
REV 2
相關(guān)PDF資料
PDF描述
MUN5212T3 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MUN5234T3 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MUN5233T3 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MUN5231T3 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MUN5214T3 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MUN5213TI 制造商:Rochester Electronics LLC 功能描述:- Bulk
MUN5214 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:NPN Silicon Bias Resistor Transistor
MUN5214DW 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Dual Bias Resistor Transistor
MUN5214DW1T1 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
MUN5214DW1T1G 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 SS BR XSTR NPN 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
主站蜘蛛池模板: 松桃| 西盟| 荃湾区| 绍兴县| 玉田县| 吉水县| 延安市| 东丽区| 睢宁县| 岳阳市| 库尔勒市| 周口市| 青岛市| 吴川市| 桓台县| 乌拉特后旗| 新龙县| 阆中市| 龙南县| 扎鲁特旗| 黎城县| 乌什县| 双桥区| 东阳市| 巴东县| 包头市| 崇左市| 左云县| 清远市| 米泉市| 武邑县| 天峨县| 石楼县| 涞源县| 宜兴市| 红原县| 曲麻莱县| 杭锦旗| 宁强县| 买车| 图片|